Product Summary
The MMBT2222LT1G is a NPN silicon transistor for general purpose.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 30Vdc; (2)Collector-Base Voltage, VCBO: 60Vdc; (3)Emitter-Base Voltage, VEBO: 5.0Vdc; (4)Collector Current, Continuous IC: 600mAdc.
Features
Features: (1)Pb-Free Package May be Available; (2)The G-Suffix Denotes a Pb-Free Lead Finish.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MMBT2222LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 75V NPN |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MMBT 2222A LT1 |
Infineon Technologies |
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.6A |
Data Sheet |
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MMBT 2907A LT1 |
Infineon Technologies |
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 60V 0.6A |
Data Sheet |
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MMBT 3904 LT1 |
Infineon Technologies |
Transistors Bipolar (BJT) AF TRANS GP BJT NPN 40V 0.2A |
Data Sheet |
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MMBT 3904 LT3 |
Infineon Technologies |
Transistors Switching (Resistor Biased) NPN Silicon Switch TRANSISTOR |
Data Sheet |
Negotiable |
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MMBT 3906 LT1 |
Infineon Technologies |
Transistors Bipolar (BJT) AF TRANS GP BJT PNP 40V 0.2A |
Data Sheet |
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MMBT A06 LT1 |
TRANSISTOR AF NPN SOT-23 |
Data Sheet |
Negotiable |
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